PXAC201202FC-V2中文资料High Power RF LDMOS FET120 W, 28 V, 1800 – 2200 MHz数据手册MACOM规格书

描述 Description

The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

特性 Features

• Broadband internal input and output matching
• Asymmetric Doherty design
• Main: P1dB = 35 W Typ
• Peak: P1dB = 80 W Typ
• Broadband internal matching
• CW performance in a Doherty configuration, 1805 MHz, 28 V
• Output power = 100 W P1dB
• Gain = 17.3 dB at 17.8 W Avg
• Efficiency = 46% at 17.8 W Avg
• CW performance in a Doherty configuration, 2100 MHz, 28 V
• Output power = 15.8 W Avg
• Gain = 15.5 dB
• Efficiency = 46%
• Capable of handling 10:1 VSWR @ 28 V, 16 W (CW) output power
• Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant