PXAC210552MDV1中文资料Cellular (2000 MHz to 2200 MHz)数据手册Infineon规格书

描述 Description

High Power RF LDMOS FET, 55 W, 28 V, 1805 - 2170 MHz

特性 Features

· Broadband internal input and output matching
·Asymmetrical Doherty design - Main : P 1dB = 20 W Typ - Peak : P 1dB = 35 W Typ
·Typical Pulsed CW performance, 1990 MHz, 28 V, Doherty Configuration - Output power at P 1dB = 40.7 W - Efficiency = 63.7% - Gain = 16.7 dB
·Capable of handling 10:1 VSWR @27 V, 55 W (CW) output power
·Integrated ESD protection
·Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
·Low thermal resistance
·Pb-free and RoHS compliant