PXAC210552FC-V1中文资料High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz数据手册MACOM规格书

描述 Description

Broadband internal matching Asymmetric Doherty design: Main P1dB = 20 W Typ; Peak: P1dB = 35 W Typ CW performance; 2170 MHz; 26 V: Output power at P1dB = 27 W; Gain = 17 dB; Efficiency = 59% Integrated ESD protection: Human Body Model; Class 1B (per ANSI/ESDA/JEDEC JS-001) Capable of handling 10:1 VSWR @28 V; 55 W (CW) output power Pb-free and RoHS compliant

特性 Features

• Broadband internal matching
•CW performance; 2170 MHz; 26 V: Output power at P1dB = 27 W; Gain = 17 dB; Efficiency = 59%
•Capable of handling 10:1 VSWR @28 V; 55 W (CW) output power
•Pb-free and RoHS compliant

应用 Application

• Multi-standard Cellular Power Amplifiers