PXAC182908FVV1R0中文资料Cellular (1800 MHz to 1995 MHz)数据手册Infineon规格书

描述 Description

High Power RF LDMOS FET, 240 W, 28 V, 1805-1880 MHz

特性 Features

·Broadband internal input and output matching
·Asymmetrical Doherty design - Main: P1dB = 120 W Typ - Peak: P1dB = 220 W Typ
·Typical Pulsed CW performance, 1842.5 MHz, 28 V, combined outputs - Output power at P1dB = 240 W - Efficiency = 52.6% - Gain = 14.5 dB
·Capable of handling 10:1 VSWR @28 V, 240 W (CW) output power
·Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
·Integrated ESD protection
·Low thermal resistance
·Pb-free and RoHS-compliant