High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz

Broadband internal matching Asymmetric Doherty design: Main P1dB = 20 W Typ; Peak: P1dB = 35 W Typ CW performance; 2170 MHz; 26 V: Output power at P1dB = 27 W; Gain = 17 dB; Efficiency = 59% Integrated ESD protection: Human Body Model; Class 1B (per ANSI/ESDA/JEDEC JS-001) Capable of handling 10 • Broadband internal matching\n•CW performance; 2170 MHz; 26 V: Output power at P1dB = 27 W; Gain = 17 dB; Efficiency = 59%\n•Capable of handling 10:1 VSWR @28 V; 55 W (CW) output power\n•Pb-free and RoHS compliant\n;

MACOM

Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz

Description The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhanced package with earless flange.

文件：702.58 Kbytes 页数：10 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz

Description The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhanced package with earless flange.

文件：702.58 Kbytes 页数：10 Pages

WOLFSPEED

BGA

INFINEON/英飞凌

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BGA

INFINEON/英飞凌

上传：深圳市品优时代科技有限公司