PXAC261212FCV1中文资料Cellular (2300 MHz to 2700 MHz)数据手册Infineon规格书

描述 Description

High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz

特性 Features

·Broadband internal matching
·Asymmetric design  - Main = 50 W P1dB - Peak = 75 W P1dB - Efficiency = 57%
·CW performance in Doherty configuration, 2635 MHz, 28 V - Output power at P1dB = 107 W - Gain = 14.4 dB - Efficiency = 57%
·Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
·Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power
·Low thermal resistance