PXAC213308FVV1数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 320 W, 28 V, 2110 – 2200 MHz

特性 Features

·Broadband internal input and output matching
·Asymmetrical Doherty design - Main : P1dB = 140 W Typ - Peak : P1dB = 190 W Typ
·Typical Pulsed CW performance, 2170 MHz, 28 V, combined outputs - Output power at P 3dB = 320 W - Efficiency = 53% @ P 3dB - Gain = 16 dB@ P 3dB
·Capable of handling 10:1 VSWR @ 28 V, 170 W CW output power
·Integrated ESD protection
·Low thermal resistance
·Pb-free and RoHS compliant