PTFB213208FVV2数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 320 W, 28 V, 2110 – 2170 MHz

特性 Features

·Broadband internal matching
·Wide video bandwidth
·Typical pulsed CW performance, 2140 MHz, 28 V (combined outputs) - Output power @ P1dB = 343 W - Efficiency = 54% - Gain = 16.5 dB
·Typical single-carrier WCDMA performance, 2140 MHz, 28 V - Output power = 50 dBm avg - Gain = 17 dB,Efficiency = 32%
·Capable of handling 10:1 VSWR @ 28 V, 320 W (CW) output power
·Integrated ESD protection
·Low thermal resistance
·Pb-free and RoHS compliant
·Package: H-37275G-6/2, earless