PTFB211803ELV1数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

High Power RF LDMOS FET, 180 W, 30 V, 2110 – 2170 MHz

特性 Features

·Broadband internal matching
·Typical two-carrier WCDMA performance at 2170 MHz, 30 V - Average output power = 40 W - Linear Gain = 17.5 dB - Efficiency = 29.7% - Intermodulation distortion = –34 dBc - Adjacent channel power = –37 dBc
·Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 180 W - Efficiency = 55%
·Increased negative gate-source voltage range for improved performance in Doherty amplifiers
·Integrated ESD protection.
·Capable of handling 10:1 VSWR @ 30 V, 180 W (CW) output power
·Pb-free and RoHS compliant
·Package: H-33288-6, bolt-down

简介

PTFB211803ELV1属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PTFB211803ELV1晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。