PTFB210801FAV1数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 80 W, 28 V, 2110 – 2170 MHz

特性 Features

·Broadband internal matching
·Typical single-carrier WCDMA performance at 2170 MHz, 28 V - Average output power = 25 W - Linear Gain = 18.5 dB - Efficiency = 32.5% - Adjacent channel power = –37 dBc
·Typical CW performance, 2170 MHz, 28 V, - Output power at P1dB = 80 W - Efficiency = 55%
·Integrated ESD protection
·Capable of handling 10:1 VSWR @ 28 V, 80 W (CW) output power
·Pb-free and RoHS compliant
·Package: H-37265-2, earless