PTFB192503ELV1数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 240 W, 30 V, 1930 – 1990 MHz

特性 Features

·Broadband input and output matching
·Enhanced for use in DPD error correction systems
·Typical two-carrier WCDMA performance at 1990 MHz, 30 V   - Average output power = 50 W - Linear Gain = 19 dB - Efficiency = 28% - IMD = -35 dBc
·Typical CW performance, 1990 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 55%
·Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
·Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power
·Integrated ESD protection. Human Body Model, Class 2 (minimum) 
·Pb-free and RoHS compliant
·Package: H-33288-6, bolt-down