PTFB183404EV1数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FETs, 340 W, 30 V, 1805 – 1880 MHz

特性 Features

·Broadband input and output matching
·Wide video bandwidth
Typical single-carrier WCDMA performance at 1880 MHz, 30 V - Output power = 125 W - Efficiency = 31% - Gain = 17 dB,PAR = 5.5 dB @ 0.01% CCDF probability - ACPR @ 5 MHz= -37 dBc
·Increased negative gate-source voltage range for improved performance in Doherty amplifiers
·Capable of handling 10:1 VSWR @ 30 V, 340 W (CW) output power
·Integrated ESD protection
·Excellent thermal stability  
·Pb-free and RoHS compliant
·Package: H-36275-8, bolt-down