PTFB182503FLV2中文资料Cellular (1800 MHz to 1995 MHz)数据手册Infineon规格书

描述 Description

High Power RF LDMOS FET, 240 W, 1805 – 1880 MHz

特性 Features

·Broadband internal input and output matching
·Enhanced for use in DPD error correction systems
·Typical two-carrier WCDMA performance, 1880 MHz, 30 V - Average output power = 50 W - Linear gain = 19 dB - Drain efficiency = 28 % - Intermodulation distortion = –35 dBc
·Typical CW performance, 1880 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 55%
·Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
·Integrated ESD protection. Human Body Model, Class 2 (minimum)
·Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power
·Pb-free, RoHS compliant
·Package: H-34288-4/2, earless