PTFB093608SVV2R250数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

High Power RF LDMOS FET, 360 W, 28 V, 920 – 960 MHz

特性 Features

·Broadband internal matching
·Enhanced for use in DPD error correction systems and Doherty applications
·Wide video bandwidth
·Typical single-carrier WCDMA performance, 960 MHz, 28 V, device leads in gullwing configuration - Average output power = 160 W - Gain = 19 dB - Efficiency = 40%
·Integrated ESD protection
·Low thermal resistance
·Capable of handling 10:1 VSWR @ 32 V, 960 MHz, +3 dB Input Overdrive = 500 W (CW) output power
·Pb-Free and RoHS compliant
·Package: H-37275G-6/2, gull wing, surface mount

简介

PTFB093608SVV2R250属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PTFB093608SVV2R250晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。