PTFB090901FAV2数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET 90 W, 28 V, 920 – 960 MHz

特性 Features

·Input and output internal matching
Typical CW performance, 960 MHz, 28 V, 90 W output power at P1dB, 65% efficiency
Typical two-carrier WCDMA performance, 960 MHz, 28 V - 20 W average output power - 20.8 dB gain - 35% Efficiency - –35 dBc intermodulation distortion
·Integrated ESD protection
·Low thermal resistance
·Pb-free and RoHS-compliant
·Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power
·Package: H-37265-2, earless