Cellular (700 MHz to 1000 MHz)

High Power RF LDMOS FET 90 W, 28 V, 920 – 960 MHz ·Input and output internal matching\n Typical CW performance, 960 MHz, 28 V, 90 W output power at P1dB, 65% efficiency\n Typical two-carrier WCDMA performance, 960 MHz, 28 V - 20 W average output power - 20.8 dB gain - 35% Efficiency - –35 dBc intermodulation distortion\n ·Integrated E;

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：1.20768 Mbytes 页数：14 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：1.20768 Mbytes 页数：14 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：1.20768 Mbytes 页数：14 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：1.20768 Mbytes 页数：14 Pages

Infineon

英飞凌