PTFB182557SHV1中文资料Cellular (1800 MHz to 1995 MHz)数据手册Infineon规格书

描述 Description

High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz

特性 Features

·Broadband input and output matching
·Optimized for use as peak side in Doherty amplifiers
Typical two-carrier WCDMA performance at 1842 MHz, 28 V, 3GPP signal, 8.0 dB PAR, 10 MHz carrier spacing - 75 W average output power - 18.5 dB gain - 31% efficiency - –31 dBc IMD, - –36 dBc ACPR
·Typical CW performance at 1842 MHz, 28 V - 250 W output power at P1dB - 49% efficiency - 18 dB gain
·Capable of handling 10:1 VSWR @ 28 V, 240 W (CW) output power
·Integrated ESD protection
·Low thermal resistance 
·Pb-free and RoHS-compliant
·Package: H-34288G-4/2, gull wing, surface mount