PTFB183408SVV2数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET 340 W, 30 V, 1805 – 1880 MHz

特性 Features

·Broadband input and output matching
·Wide video bandwidth
·Typical single-carrier WCDMA performance at 1880 MHz, 30 V, 5.5 dB PAR @ 0.01% CCDR probability - Output power = 125 W - Efficiency = 31% - Gain = 17 dB - ACPR @ 5 MHz= –37 dBc
·Increased negative gate-source voltage range for improved performance in Doherty amplifiers
·Capable of handling 10:1 VSWR @ 30 V, 300 W (CW) output power
·Integrated ESD protection
·Excellent thermal stability 
·Pb-free and RoHS-compliant
·Package: H-34275G-6/2, gull wing