PTFB212503FLV2数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 240 W, 2110 – 2170 MHz

特性 Features

·Broadband internal input and output matching
·Enhanced for use in DPD error correction systems
·Wide video bandwidth
·Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF - Average output power = 49.4 dBm - Linear gain = 18 dB - Efficiency = 37% - Intermodulation distortion = –33 dBc
·Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 54 %
·Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
·Integrated ESD protection: Human Body Model, Class 2 (minimum)
·Capable of handling 10:1 VSWR @ 30 V, 240 W (CW)output power
·Pb-free, RoHS-compliant
·Package: H-34288-4/2, earless