PTFB213004FV2数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 300 W, 30 V, 2110 – 2170 MHz

特性 Features

·Broadband internal matching
·Enhanced for use in DPD error correction systems
·Wide video bandwidth
·Typical single-carrier WCDMA performance at 2170 MHz, 30 V, - POUT = 49.5 dBm Avg - Gain = 17.5 dB - Efficiency = 30%
·Increased negative gate-source voltage range for improved performance in Doherty amplifiers
·Capable of handling 10:1 VSWR @ 30 V, 300 W (CW) output power
·Excellent thermal stability
·Integrated ESD protection
·Pb-free and RoHS-compliant
·Package: H-37275-6/2, earless