丝印：PSC2H12Y；Package：DPAKHV；Automotive 1200 V, 2 A power Schottky silicon carbide diode

Features • AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • High forward surge capability • Operating Tj from -40 °C to 175 °C • Creepage distance of 3 mm as per IEC 60664-1 • ECOPACK2 compliant component Applications • Bootstrap function of SiC MOS-FETS • Snubbe

文件：259.75 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC2H12Y；Package：DPAKHV；Automotive 1200 V, 2 A power Schottky silicon carbide diode

Features • AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • High forward surge capability • Operating Tj from -40 °C to 175 °C • Creepage distance of 3 mm as per IEC 60664-1 • ECOPACK2 compliant component

文件：299.25 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体