丝印：PSMN013-100PS；Package：SOT78；N-channel 100V 13.9mΩ standard level MOSFET in TO220.

1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High efficiency due to low switching and conduction loss

文件：739.2 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：PSMN013-100PS；Package：SOT78；N-channel 100V 13.9mΩ standard level MOSFET in TO220.

1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High efficiency due to low switching and conduction loss

文件：739.2 Kbytes 页数：14 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 68A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13.9mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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N-channel 100V 13.9m廓 standard level MOSFET in TO220.

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N-Channel 100-V (D-S) MOSFET

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N-channel 100V 13.9m廓 standard level MOSFET in TO220

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PHI

飞利浦