丝印：PSMN4R8-100BSE；Package：D2PAK；N-channel 100 V 4.8 m廓 standard level MOSFET in D2PAK

文件：789.49 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：PSMN4R8-100BSE；Package：D2PAK；N-channel 100 V 4.8 m廓 standard level MOSFET in D2PAK

文件：789.49 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.61 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：332.8 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100 V 4.8 m廓 standard level MOSFET in D2PAK

文件：270.62 Kbytes 页数：13 Pages

PHI

飞利浦