丝印：PSMN8R5-100PS；Package：SOT78；N-channel 100 V 8.5 mΩ standard level MOSFET in TO220

1. General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction lo

文件：735.06 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：PSMN8R5-100PSF；Package：TO-220AB；NextPower 100 V, 8.7 m廓 N-channel MOSFET in TO220package

文件：264.8 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：PSMN8R5-100PS；Package：SOT78；N-channel 100 V 8.5 mΩ standard level MOSFET in TO220

1. General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction lo

文件：735.06 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：PSMN8R5-100PSF；Package：TO-220AB；NextPower 100 V, 8.7 m廓 N-channel MOSFET in TO220package

文件：264.8 Kbytes 页数：13 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.75 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 97A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.4 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100 V 8.5 m廓 standard level MOSFET in TO220

文件：258.51 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel 100 V 8.5 m廓 standard level MOSFET in TO220

文件：258.51 Kbytes 页数：14 Pages

PHI

飞利浦