丝印：PSMN8R5-100PSF；Package：TO-220AB；NextPower 100 V, 8.7 m廓 N-channel MOSFET in TO220package

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 97A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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PSMN8R5-100PSF - NextPower 100 V, 8.7 mΩ N-channel MOSFET in TO220 package

NextPower 100 V, 8.7 mΩ N-channel MOSFET in TO220 package - NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications. ·Optimised for fast switching, low spiking, high efficiency\n·Low QG x RDSon FOM for high efficiency switchingapplications\n·Low body diode losses (Qrr) and fast recovery (trr)\n·Strong avalanche energy rating (EAS)\n·Avalanche rated & 100% tested\n·Ha-free & RoHS compliant TO220 package;

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N-channel 100V 8.5 m廓 standard level MOSFET in TO220F(SOT186A)

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司