丝印：PSMN4R8-100PSE；Package：TO-220AB；N-channel 100 V 5 m廓 standard level MOSFET with improved SOA in TO220 package

文件：791.63 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：PSMN4R8-100PSE；Package：TO-220AB；N-channel 100 V 5 m廓 standard level MOSFET with improved SOA in TO220 package

文件：791.63 Kbytes 页数：13 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.18 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100 V 5 m廓 standard level MOSFET with improved SOA in TO220 package

文件：261.11 Kbytes 页数：13 Pages

PHI

飞利浦