丝印：PSMN5R6-100PS；Package：SOT78；N-channel 100 V 5.6 mΩ standard level MOSFET in TO220

1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High efficiency due to low switching and conduction

文件：739.72 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：PSMN5R6-100PS；Package：SOT78；N-channel 100 V 5.6 mΩ standard level MOSFET in TO220

1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High efficiency due to low switching and conduction

文件：739.72 Kbytes 页数：13 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.17 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100 V 5.6 m廓 standard level MOSFET

文件：213.87 Kbytes 页数：13 Pages

恩XP

N-channel 100 V 5.6 m廓 standard level MOSFET in TO220

文件：237.19 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel 100 V 5.6 m廓 standard level MOSFET in TO220

文件：237.19 Kbytes 页数：13 Pages

PHI

飞利浦