丝印：PSMN2R5-60PL；Package：SOT78；N-channel 60 V, 2.6 mΩ logic level MOSFET in SOT78

1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • Robust construction for dem

文件：731.79 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：PSMN2R5-60PL；Package：SOT78；N-channel 60 V, 2.6 mΩ logic level MOSFET in SOT78

1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • Robust construction for dem

文件：731.79 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel 60 V, 2.6 m廓 logic level MOSFET in SOT78

文件：261.85 Kbytes 页数：13 Pages

恩XP

isc N-Channel MOSFET Transistor

文件：305.29 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 60 V, 2.6 m廓 logic level MOSFET in SOT78

文件：261.86 Kbytes 页数：13 Pages

PHI

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