丝印：PSMN4R6-60PS；Package：SOT78；N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220

1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conductio

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NEXPERIA

安世

丝印：PSMN4R6-60PS；Package：SOT78；N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220

1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conductio

文件：976.14 Kbytes 页数：14 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.4mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.6 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 60 V, 4.6 m廓 standard level MOSFET in TO220

文件：260.94 Kbytes 页数：14 Pages

恩XP

N-channel 60 V, 4.6 m廓 standard level MOSFET in TO220

文件：233.53 Kbytes 页数：14 Pages

PHI

飞利浦