| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PSC10 | Pegasus Contact blocks Spring loaded Terminals 文件：358 Kbytes 页数：3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | |
丝印：PSC1065K；Package：TO-220-2；650 V, 10 A SiC Schottky diode in TO-220-2 R2P 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 (SOT8021) through-hole power plastic package. T 文件：211.61 Kbytes 页数：10 Pages | NEXPERIA 安世 | NEXPERIA | ||
650 V, 10 A SiC Schottky diode in bare die General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capaci 文件：202.85 Kbytes 页数：9 Pages | NEXPERIA 安世 | NEXPERIA | ||
650 V, 10 A SiC Schottky diode in bare die for automotive applications General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capaci 文件：234.59 Kbytes 页数：9 Pages | NEXPERIA 安世 | NEXPERIA | ||
650 V, 10 A SiC Schottky diode in DPAK R2P 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin DPAK R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic pa 文件：177.2 Kbytes 页数：7 Pages | NEXPERIA 安世 | NEXPERIA | ||
650 V, 10 A SiC Schottky diode in DPAK R2P for automotive applications General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package of 文件：262.95 Kbytes 页数：11 Pages | NEXPERIA 安世 | NEXPERIA | ||
650 V, 10 A SiC Schottky diode in D2PAK R2P 1. General description Nexperia introduces leading edge Silicon Carbide Schottky (SiC) diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic p 文件：180.12 Kbytes 页数：7 Pages | NEXPERIA 安世 | NEXPERIA | ||
650 V, 10 A SiC Schottky diode in TO-247-2 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a 2-pin TO-247-2 through-hole power plastic package offers temperature indepen 文件：148.85 Kbytes 页数：6 Pages | NEXPERIA 安世 | NEXPERIA | ||
100 - 240 WATTS DC/DC SINGLE MULTI OUTPUT 文件：1.91954 Mbytes 页数：4 Pages | POWERBOX | POWERBOX | ||
100 - 240 WATTS DC/DC SINGLE MULTI OUTPUT 文件：1.91954 Mbytes 页数：4 Pages | POWERBOX | POWERBOX |
技术参数
- Package name：
PSC1065B1
- Size (mm)：
1.45 x 1.45 x 0.11
- VRRM [max] (V)：
650
- VF [max] @25 C (V)：
1.8
- @IF [max] @140 C (A)：
10
- IR [max] @25 C (µA)：
60
- @VR (V)：
650
- IFSM [max] (A)：
440
- Configuration：
single
- Ptot [max] (W)：
65
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三年内 |
1983 |
只做原装正品 |
询价 | ||||
24+ |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 | ||||
ST/意法 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
POWER SUPPLY |
25+ |
71 |
公司优势库存 热卖中! |
询价 | |||
TDK/东电化 |
23+ |
3840000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
ST/意法 |
24+ |
NA/ |
5176 |
原厂直销,现货供应,账期支持! |
询价 | ||
NEXPERIA |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 | ||
China Wind |
21+ |
2232 |
只做原装,优势渠道 ,欢迎实单联系 |
询价 | |||
CW |
23+ |
2232 |
加QQ:78517935原装正品有单必成 |
询价 | |||
MeanWell |
24+ |
NA |
1190 |
进口原装正品优势供应 |
询价 |
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