Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

文件：98.6 Kbytes 页数：7 Pages

PHI

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Dual N-channel TrenchMOS logic level FET

General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Suitable

文件：204.1 Kbytes 页数：13 Pages

恩XP

Dual N-channel TrenchMOS logic level FET

1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits

文件：767.02 Kbytes 页数：13 Pages

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安世

Dual N-channel enhancement mode MOS transistor

DESCRIPTION Two N-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

文件：88.31 Kbytes 页数：12 Pages

PHI

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Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. FEATURES • Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package Applications:- • Motor and relay drivers • d.c. to

文件：109.1 Kbytes 页数：7 Pages

PHI

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Dual N-channel enhancement mode TrenchMOSTM transistor

FEATURES • Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package GENERAL DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- • Motor and relay drivers •

文件：213.25 Kbytes 页数：8 Pages

NEXPERIA

安世

Dual N-channel TrenchMOS intermediate level FET

1.1 General description Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and ben

文件：438.05 Kbytes 页数：14 Pages

NEXPERIA

安世

4 N-channel 60 mohm FET array enhancement mode MOS transistors

DESCRIPTION Four enhancement mode MOS transistors in a 16-pin plastic SOT338-1 (SSOP16) package. Two transistors feature current monitoring (sense FETs). FEATURES • High-speed switching • No secondary breakdown • Very low on-state resistance • Current monitoring. APPLICATIONS • Motor and a

文件：94.44 Kbytes 页数：12 Pages

PHI

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TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver

GENERAL DESCRIPTION Six n-channel, enhancement mode, logic level, field-effect power transistors and six schottky diodes configured as three half-bridges. This device has low on-state resistance and fast switching. The intended application is in computer disk and tape drives as a three phase brus

文件：116.13 Kbytes 页数：7 Pages

PHI

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N-channel enhancement mode TrenchMOS transistor array

GENERAL DESCRIPTION This product is used to drive high performance, three phase brushless d.c. motors in computer disk drives. The PHN70308 contains seven, n-channel enhancement mode trenchMOS transistors in a surface mounting plastic package. Six of the transistors can be configured as a three

文件：172.04 Kbytes 页数：10 Pages

PHI

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