2.0mm pitch/Disconnectable Insulation displacement and Crimp style connectors

文件：179.52 Kbytes 页数：8 Pages

JST

JST集团

丝印：PHN；Package：DO-214AB；5.0 To 440V 3000W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 5μA above 9V 3000W Peak power capability at 10 × 1000μs waveform Repetition rate (d

文件：4.23189 Mbytes 页数：8 Pages

UNSEMI

优恩半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.00687 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. The combination of very low on-state resistance and low switching losses make this device the optimum choice in high speed computer motherboard

文件：115.6 Kbytes 页数：7 Pages

PHI

飞利浦

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • Very low on-state resistance. APPLICATIONS • DC to DC converters • General purpose switching applications.

文件：60.52 Kbytes 页数：8 Pages

PHI

飞利浦

N-channel TrenchMOS transistor Logic level

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible

文件：95.32 Kbytes 页数：7 Pages

PHI

飞利浦

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives

文件：1.00395 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

文件：88.84 Kbytes 页数：7 Pages

PHI

飞利浦

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

文件：76.66 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

文件：79.46 Kbytes 页数：12 Pages

PHI

飞利浦