丝印：Z3；Package：SOT666；50 V, 100 mA PNP/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open

1. General description PNP/PNP Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD6 NPN/NPN complement: PEMH7 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • Reduces c

文件：202.21 Kbytes 页数：10 Pages

NEXPERIA

安世

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages Features ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick and place costs ■ Simplifies circuit design Applications ■

文件：76.23 Kbytes 页数：10 Pages

恩XP

丝印：2T；Package：SOT666；PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

1.1 General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages 1.2 Features 1.3 Applications Table 1. Product overview Type number Package NPN/PNP complement NPN/NPN 恩XP JEITA complement PEMB30 SOT666 - PEMD30 PEMH30 PUMB30 SO

文件：191.09 Kbytes 页数：11 Pages

NEXPERIA

安世

PNP/PNP resistor-equipped transistors; R1 = 10 k廓, R2 = open

DESCRIPTION PNP/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral drivers

文件：137.13 Kbytes 页数：8 Pages

恩XP

PNP resistor-equipped double transistor R1 = 10 kohm, R2 = open

DESCRIPTION PNP resistor-equipped double transistor in a SOT666 plastic package. FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Excellent coplanarity due to straight leads • Reduces number of components as replacement of two SC-7

文件：44.57 Kbytes 页数：8 Pages

PHI

PHI

丝印：B4；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •Low current peripheral drivers •Replacement of general purpose transistors in digital applications •Control of IC inputs. DESCRIPTION PNP/PNP resist

文件：342.26 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：Z6；Package：SOT666；50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ

1. General description PNP/PNP double Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface- Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD9 NPN/NPN complement: PEMH9 2. Features and benefits • 100 mA output current capability • Built-in bias resisto

文件：222.72 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：Z6；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：920.08 Kbytes 页数：15 Pages

NEXPERIA

安世

PNP/PNP resistor-equipped transistors; R1 = 10 kW, R2 = 47 kW

DESCRIPTION PNP/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current

文件：54.12 Kbytes 页数：8 Pages

PHI

PHI

PNP/PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 47 k廓

DESCRIPTION PNP/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current

文件：143.99 Kbytes 页数：8 Pages

恩XP