NPN/PNP resistor-equipped transistors R1 = 100 kW, R2 = 100 kW

General description NPN/PNP Resistor-Equipped Transistors (RET). Features ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place costs Applications ■ Low current peripheral driver ■ Control of IC inputs ■ Replaces general-purpose transist

文件：78.26 Kbytes 页数：10 Pages

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丝印：6N；Package：SOT666；50 V, 20 mA NPN/PNP resistor-equipped double transistor; R1 = 100 kΩ, R2 = 100 kΩ

1. General description NPN/PNP Resistor-Equipped double Transistor (RET) in an ultra small flat lead SOT666 Surface- Mounted Device (SMD) plastic package. PNP/PNP complement: PEMB24 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • Reduces component count •

文件：246.42 Kbytes 页数：12 Pages

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丝印：D3；Package：SOT666；NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

1.1 General description NPN/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. 1.2 Features and benefits 1.3 Applications  Low current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications Table 1

文件：1.69389 Mbytes 页数：18 Pages

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丝印：D3；Package：SOT666；NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：1.69391 Mbytes 页数：18 Pages

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NPN/PNP resistor-equipped transistors; R1 = 10 kohm, R2 = 10 kohm

DESCRIPTION NPN/PNP resistor-equipped transistors in a SOT666 plastic package. FEATURES • 300 mW total power dissipation • Very small 1.6 mm x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB are

文件：67.25 Kbytes 页数：12 Pages

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NPN/PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

General description NPN/PNP Resistor-Equipped Transistors (RET). Features Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Low current peripheral driver Control of IC inputs Replaces general-purpos

文件：334.46 Kbytes 页数：11 Pages

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NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：1.69391 Mbytes 页数：18 Pages

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丝印：2U；Package：SOT666；50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = open

1. General description NPN/PNP double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PEMH30 PNP/PNP complement: PEMB30 2. Features and benefits • 100 mA output current capability • Built-in bias r

文件：223.98 Kbytes 页数：11 Pages

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丝印：2U；Package：SOT666；NPN/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

Features * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：83.68 Kbytes 页数：11 Pages

NEXPERIA

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NPN/PNP double resistor-equipped transistors R1 = 2.2 kW, R2 = open

General description NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Features ■ 100 mA output current capability ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place costs

文件：84.14 Kbytes 页数：11 Pages

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