PNP/PNP resistor-equipped transistors; R1 = 47 k廓, R2 = 47 k廓

General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ 100 mA output current capability  ■ Reduces component count ■ Built-in bias resistors  ■ Reduces pick and place costs ■ Simplifies circuit desig

文件：144.13 Kbytes 页数：8 Pages

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PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.

General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ 100 mA output current capability  ■ Reduces component count ■ Built-in bias resistors  ■ Reduces pick and place costs ■ Simplifies circuit desig

文件：628.59 Kbytes 页数：14 Pages

恩XP

PNP/PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

General description PNP/PNP resistor-equipped transistors Features ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place cost Applications ■ Low current peripheral driver ■ Control of IC inputs ■ Replacement of general-purpose transistor

文件：71.98 Kbytes 页数：11 Pages

恩XP

丝印：6G；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

1.1 General description PNP/PNP resistor-equipped transistors 1.2 Features n Built-in bias resistors n Simplifies circuit design n Reduces component count n Reduces pick and place cost 1.3 Applications n Low current peripheral driver n Control of IC inputs n Replacement of general-purpos

文件：71.41 Kbytes 页数：11 Pages

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安世

PNP/PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

General description PNP/PNP resistor-equipped transistors Features ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place cost Applications ■ Low current peripheral driver ■ Control of IC inputs ■ Replacement of general-purpose transistor

文件：80.04 Kbytes 页数：11 Pages

恩XP

丝印：6M；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

文件：79.48 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：Z3；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION PNP/PN

文件：136.32 Kbytes 页数：8 Pages

NEXPERIA

安世

NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION NPN/PNP

文件：297.97 Kbytes 页数：8 Pages

NEXPERIA

安世

PNP resistor-equipped double transistor R1 = 4.7 kohm, R2 = open

DESCRIPTION PNP resistor-equipped double transistor in a SOT666 plastic package. FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Excellent coplanarity due to straight leads • Reduces number of components as replacement of two SC-7

文件：44.8 Kbytes 页数：8 Pages

PHI

PHI

PNP/PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = open

DESCRIPTION PNP/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral drivers

文件：137.07 Kbytes 页数：8 Pages

恩XP