PNP resistor-equipped double transistor R1 = 4.7 kohm, R2 = open

DESCRIPTION PNP resistor-equipped double transistor in a SOT666 plastic package. FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Excellent coplanarity due to straight leads • Reduces number of components as replacement of two SC-7

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丝印：Z3；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION PNP/PN

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NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION NPN/PNP

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丝印：Z3；Package：SOT666；50 V, 100 mA PNP/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open

1. General description PNP/PNP Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD6 NPN/NPN complement: PEMH7 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • Reduces c

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PNP/PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = open

DESCRIPTION PNP/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral drivers

文件：137.07 Kbytes 页数：8 Pages

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丝印：2T；Package：SOT666；PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

1.1 General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages 1.2 Features 1.3 Applications Table 1. Product overview Type number Package NPN/PNP complement NPN/NPN NXP JEITA complement PEMB30 SOT666 - PEMD30 PEMH30 PUMB30 SO

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PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages Features ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick and place costs ■ Simplifies circuit design Applications ■

文件：76.23 Kbytes 页数：10 Pages

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PNP/PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = open

文件：137.07 Kbytes 页数：8 Pages

PHI

飞利浦

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

文件：76.23 Kbytes 页数：10 Pages

PHI

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PNP/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open

PNP/PNP resistor-equipped transistors (see ?Simplified outline, symbol and pinning? for package details). • Built-in bias resistors\n• Simplified circuit design\n• Reduction of component count\n• Reduced pick and place costs.\n• AEC-Q101 qualified;

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