丝印：-15；Package：SOT-323；NPN resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

NPN resistor equipped transistor PDTC115EE SOT416 PDTC115EEF SOT490 PDTC115EK SOT346 PDTC115EM SOT883 PDTC115ES SOT54 (TO-92) PDTC115ET SOT23 PDTC115EU SOT323 • Built-in bias resistors • Simplified circuit design • Reduction of component count • R

文件：188.86 Kbytes 页数：14 Pages

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PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：422.65 Kbytes 页数：15 Pages

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丝印：15；Package：SC-70；50 V, 20 mA NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115EU-Q 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • Reduces component count • Reduces pick a

文件：183.73 Kbytes 页数：7 Pages

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丝印：46；Package：SOT-523；NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

文件：93.58 Kbytes 页数：14 Pages

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丝印：49；Package：SOT-490；NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

文件：93.58 Kbytes 页数：14 Pages

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丝印：56；Package：SOT-346；NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

文件：93.58 Kbytes 页数：14 Pages

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丝印：DV；Package：SOT-883；NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

文件：93.58 Kbytes 页数：14 Pages

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丝印：00110001；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 100 k廓, R2 = 100 k廓

文件：955.98 Kbytes 页数：12 Pages

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丝印：TC115E；Package：SOT-54；NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

文件：93.58 Kbytes 页数：14 Pages

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丝印：-44；Package：SOT-23；NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

文件：93.58 Kbytes 页数：14 Pages

PHI

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