NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115EMB.\n • 20 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm\n;

Nexperia

安世

丝印：00110001；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 100 k廓, R2 = 100 k廓

文件：955.98 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V DFN1006B-3

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

文件：93.58 Kbytes 页数：14 Pages

PHI

飞利浦

PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Re

文件：93.83 Kbytes 页数：14 Pages

PHI

飞利浦