丝印：49；Package：SOT-490；PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Re

文件：93.83 Kbytes 页数：14 Pages

PHI

飞利浦

丝印：49；Package：SOT-490；NPN resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

NPN resistor equipped transistor PDTC115EE SOT416 PDTC115EEF SOT490 PDTC115EK SOT346 PDTC115EM SOT883 PDTC115ES SOT54 (TO-92) PDTC115ET SOT23 PDTC115EU SOT323 • Built-in bias resistors • Simplified circuit design • Reduction of component count • R

文件：188.86 Kbytes 页数：14 Pages

恩XP

丝印：49；Package：SOT490；NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：420.47 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：49；Package：SOT490；NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：420.45 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：49；Package：SC-70；50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JU 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces

文件：774.48 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：49；Package：SC-70；50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123JU 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces

文件：227.38 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：49；Package：SOT-416FL；NPN 100mA 50V Digital Transistor

文件：1.33617 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：49；Package：SOT-723；NPN 100mA 50V Digital Transistor

文件：1.33617 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：49；Package：SOT-323FL；NPN 100mA 50V Digital Transistor

文件：1.33617 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：49；Package：SOT-490；NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

文件：93.58 Kbytes 页数：14 Pages

PHI

飞利浦