丝印：4916N；Package：SOP-8；30V N-Channel MOSFET

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant (VGS = 10V)

VDS (V) =3

文件：404.05 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：4916N；Package：SOP-8；30V N-Channel MOSFET

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant (VGS = 10V)

VDS (V) =3

文件：404.05 Kbytes 页数：6 Pages

UMW

友台半导体