丝印：4916N；Package：SOP-8；30V N-Channel MOSFET

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant (VGS = 10V)

VDS (V) =3

文件：404.05 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：4916N；Package：SOP-8；30V N-Channel MOSFET

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant (VGS = 10V)

VDS (V) =3

文件：404.05 Kbytes 页数：6 Pages

UMW

友台半导体

Power MOSFET 30 V, 11.6 A, N?묬hannel, SO?? Low RDS(on) to Minimize Conduction Losses

文件：119.38 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件：1.00714 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET 30 V, 11.6 A, N?묬hannel, SO?? Low RDS(on) to Minimize Conduction Losses

文件：119.38 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Single N-Channel Power MOSFET 30V, 11.6A, 9.0mΩ

Power MOSFET, 30 V, 11.4 A, N-Channel, SOIC8 • Low rDS(on) to Minimize Conduction Loss\n• Low Capacitance to Minimize Driver Losses\n• Optimized Gate Charge to Minimize Switching Losses\n• Optimized for 5 V, 12 V Gate Drives\n• RoHS Compliant;

ONSEMI

安森美半导体