丝印：491；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ● Low saturation. ● Complementary To FMMT591. ● Excellent HFE Linearity. APPLICATIONS ● Switching appilication.

文件：1.20531 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

丝印：491；Package：SOT-23；TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Low equivalent on-resistance

文件：493.11 Kbytes 页数：3 Pages

FS

丝印：491；Package：SOT-23；Plastic-Encapsulate Transistors

FEATURES Low equivalent on-resistance

文件：758.77 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：491；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES • Low saturation. • Complementary To FMMT591. • Excellent HFE Linearity. APPLICATIONS • Switching appilication.

文件：301.86 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：491；Package：SOT-23；NPN Transistor

Features ● Low equivalent on-resistance ● Be complementaty with FMMT591

文件：1.53232 Mbytes 页数：4 Pages

PJSEMI

平晶半导体

丝印：491；Package：SOT-23；NPN Transistor

Features ● Low equivalent on-resistance

文件：1.24598 Mbytes 页数：4 Pages

PJSEMI

平晶半导体

丝印：491；Package：SOT-23；TRANSISTOR (NPN)

文件：497.15 Kbytes 页数：5 Pages

RECTRON

丽正国际

丝印：4912；Package：SOP-8；Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

文件：2.39101 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4914；Package：SOP-8；Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8 A (VGS = 10V) ● RDS(ON)

文件：3.11057 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4914；Package：SO-8；Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4914 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

文件：147.85 Kbytes 页数：8 Pages

AOSMD

万国半导体