丝印：491；Package：SOT-23；NPN Transistor

Features ● Low equivalent on-resistance

文件：1.24598 Mbytes 页数：4 Pages

PJSEMI

平晶半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(SAT) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissip

文件：303.57 Kbytes 页数：7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR

文件：380.19 Kbytes 页数：7 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Feature • BVCEO > 60V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • RCE(sat) = 195mΩ for a Low Equivalent On-Resistance • 500mW Power Dissipation • hFE Characterized up to 2A for High Current Gain Hold up • Complementary PNP Type: FMMT591 • Totally Lead-Free &

文件：153.25 Kbytes 页数：7 Pages

DIODES

美台半导体