丝印：4914；Package：SO-8；Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4914 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

文件：147.85 Kbytes 页数：8 Pages

AOSMD

万国半导体

丝印：4914；Package：SOP-8；Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8 A (VGS = 10V) ● RDS(ON)

文件：3.11057 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4914；Package：SO-8；30V Dual N-Channel MOSFET with Schottky Diode

文件：655.88 Kbytes 页数：9 Pages

AOSMD

万国半导体

低压MOSFET (12V - 30V)

Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术制造出性能领先的低压MOSFET。这些产品为DCDC、负载开关、BLDC及电源等应用量身定做。

AOS

美国万代

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4914A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronou

文件：184.91 Kbytes 页数：8 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4914A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronou

文件：184.91 Kbytes 页数：8 Pages

AOSMD

万国半导体

30V Dual N-Channel MOSFET with Schottky Diode

文件：655.88 Kbytes 页数：9 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AOS

美国万代