丝印：-15；Package：SOT-323；NPN resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

NPN resistor equipped transistor PDTC115EE SOT416 PDTC115EEF SOT490 PDTC115EK SOT346 PDTC115EM SOT883 PDTC115ES SOT54 (TO-92) PDTC115ET SOT23 PDTC115EU SOT323 • Built-in bias resistors • Simplified circuit design • Reduction of component count • R

文件：188.86 Kbytes 页数：14 Pages

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丝印：-15；Package：SOT-323；PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Re

文件：93.83 Kbytes 页数：14 Pages

PHI

飞利浦

丝印：-15；Package：SOT-323；NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

文件：93.58 Kbytes 页数：14 Pages

PHI

飞利浦

丝印：-15；Package：SOT-323；Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：-150；Package：DIP；Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V

文件：491.98 Kbytes 页数：7 Pages

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