PDTC115E

NPN resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

NPNresistorequippedtransistor PDTC115EESOT416 PDTC115EEFSOT490 PDTC115EKSOT346 PDTC115EMSOT883 PDTC115ESSOT54(TO-92) PDTC115ETSOT23 PDTC115EUSOT323 •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •R

恩XP

PDTC115E

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTC115E

NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PHI

PDTC115E

NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

恩XP

PDTC115E_SER

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTC115E_SERIES

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTC115EE

丝印：46；Package：SOT-523；PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNPresistor-equippedtransistors;R1=100kΩ,R2=100kΩ DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Re

PHI

PDTC115EE

丝印：46；Package：SOT-523；NPN resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

NPNresistorequippedtransistor PDTC115EESOT416 PDTC115EEFSOT490 PDTC115EKSOT346 PDTC115EMSOT883 PDTC115ESSOT54(TO-92) PDTC115ETSOT23 PDTC115EUSOT323 •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •R

恩XP

PDTC115EE

丝印：46；Package：SOT416；NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTC115EE

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.