TC115E

型号：PDTC115ES；Package：SOT-54；PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNPresistor-equippedtransistors;R1=100kΩ,R2=100kΩ DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Re

PHI

TC115E

型号：PDTC115ES；Package：SOT-54；NPN resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

NPNresistorequippedtransistor PDTC115EESOT416 PDTC115EEFSOT490 PDTC115EKSOT346 PDTC115EMSOT883 PDTC115ESSOT54(TO-92) PDTC115ETSOT23 PDTC115EUSOT323 •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •R

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TC115E

型号：PDTC115ES；Package：SOT54；NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

TC115E

型号：PDTC115ES；Package：SOT54；NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

TC115E

型号：PDTC115ES；Package：SOT-54；NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PHI