RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

文件：431.29 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD54008 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54008 boasts the excellent gai

文件：123.97 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD54008 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54008 boasts the excellent gai

文件：123.97 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体