RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

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STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：501.36 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：501.36 Kbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

8W 12.5V 500MHz LDMOS，PowerSO-10RF塑料封装

The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz.\n\n PD55008 boasts the excellent gain, linearity • Excellent thermal stability \n• POUT = 8 W with 17dB gain @ 500MHz / 12.5V \n• Common source configuration \n• New RF plastic package;

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Package：PowerSO-10 裸露底部焊盘；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 40V 500MHZ PWRSO10

STMICROELECTRONICS

意法半导体