RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga

文件：493.87 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：540.83 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：540.83 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

25W 12.5V 500MHz LDMOS，powerSO-10RF塑料封装

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity a • Excellent thermal stability \n• Common source configuration \n• POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V \n• New RF plastic package;

ST

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 40V 500MHZ PWRSO10

STMICROELECTRONICS

意法半导体